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SiGe Semiconductor diplexer

sigediplexer

This integrated diplexer example is from SiGe Semiconductor designed in a 5-layer metal BiCMOS technology. The design contains resistors, inductors, MiM capacitors, probe pads and thru-silicon vias. One main issue for the designers was accounting for all the coupling between the inductors, and between the inductors and interconnect. Direct simulation of the whole structure ensured that no significant interactions were missed. Comparisons of the high and low band simulated and measured responses show excellent agreement. This example was published in a paper at CICC 2010.

 

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This example was published in a paper at CICC 2010.